▎ 摘　　要

NOVELTY - Preparing reduced graphene oxide (rGO) film/gallium nitride (GaN) nanowire composite electrode comprises depositing the reduced graphene oxide film with a nickel salt catalyst as a substrate, and growing GaN nanowires by chemical vapor deposition. USE - The method is useful for preparing reduced graphene oxide film/gallium nitride nanowire composite electrode. ADVANTAGE - The method: utilizes the conductive substrate of rGO film, enhances the wettability of electrolyte and the electron/lithium ion transmission characteristics, which improves the rate characteristics of the rGO film/GaN nanowire composite electrode; utilizes chemical vapor deposition and makes full use of the large specific surface area of GaN nanowires to expose rich active sites, which can achieve the full contact of the electrolyte and rapid transfer of lithium ions and electrons during charged and discharged reactions. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for rGO film/GaN nanowire composite electrode, is prepared by using the method.