• 专利标题:   Producing silicon nitride substrate by immersing silicon substrate in acid solution, treating with acid, coating graphene oxide by drying solution on which graphene oxide is dispersed on surface of substrate, and heat-reducing.
  • 专利号:   KR2020046255-A, KR2172600-B1
  • 发明人:   DOW H S, KIM W S, BAE S G, JUYOUNGJUN
  • 专利权人:   KOREA INST CERAMIC ENG TECHNOLOGY
  • 国际专利分类:   C04B035/593, C04B041/45, C04B041/50, C04B041/87, C04B041/91
  • 专利详细信息:   KR2020046255-A 07 May 2020 C04B-041/87 202045 Pages: 15
  • 申请详细信息:   KR2020046255-A KR127129 24 Oct 2018
  • 优先权号:   KR127129

▎ 摘  要

NOVELTY - A silicon nitride (Si3N4) substrate is produced by immersing Si substrate in acid solution, treating with acid to induce hydrolysis reaction while causing hydroxy (-OH) group to be formed on the surface of the substrate, forming a solution in which graphene oxide is dispersed by adding graphene oxide powder to a solvent, coating graphene oxide by drying solution on which graphene oxide is dispersed on surface of Si3N4 substrate formed with -OH group, and heat-reducing Si3N4 substrate coated with graphene oxide to change graphene oxide to graphene and obtain graphene-coated Si3N4 substrate. USE - Production of silicon nitride substrate. ADVANTAGE - Hydroxy (-OH) groups that form chemical bonds on the Si3N4 substrate are formed, so adhesion between Si3N4 substrate and graphene coating layer can be improved, where graphene coating layer formed on the substrate can effectively heat transfer by increasing thermal diffusion, and thermal conductivity characteristics can also be improved. As a result, Si3N4 substrate has excellent heat dissipation properties.