• 专利标题:   Graphite alkenyl sensor preparing method, involves injecting ion oxygen-containing plasma in graphene film, arranging graphene film with graphene oxide thin film, and forming upper electrode layer on surface of graphene oxide film.
  • 专利号:   CN107345818-A
  • 发明人:   KANG X
  • 专利权人:   SHANGHAI INTEGRATED CIRCUIT RES DEV CE
  • 国际专利分类:   G01D005/24
  • 专利详细信息:   CN107345818-A 14 Nov 2017 G01D-005/24 201780 Pages: 6 Chinese
  • 申请详细信息:   CN107345818-A CN10515407 29 Jun 2017
  • 优先权号:   CN10515407

▎ 摘  要

NOVELTY - The method involves forming a lower electrode layer on a substrate, a bottom shielding layer and a graphene film. A hydroxide ion oxygen-containing plasma is injected in the graphene film. The graphene film is arranged with a graphene oxide film, where the graphene oxide film is determined as a sensitive material layer. A top isolation layer and an upper electrode layer are formed on a surface of the graphene oxide film. The upper electrode layer and the oxide film are formed as a capacitor structure to form a dual-capacitor structure. The oxide film is selected as an S-type structure. USE - Graphite alkenyl sensor preparing method. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a graphite alkenyl sensor preparing method. '(Drawing includes non-English language text)'