▎ 摘　　要

NOVELTY - A catalyst metal film is formed on a predetermined region of a substrate. A coating membrane having catalytic ability less than catalyst metal film is formed in side surface of catalyst metal film. The catalyst metal film is made into catalyst, and graphene is selectively produced on upper surface of catalyst metal film. Thus, graphene is manufactured. USE - Manufacture of graphene for manufacturing semiconductor device (all claimed). ADVANTAGE - Graphene is effectively formed in arbitrary regions of catalyst metal film, by simple method. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) manufacture of semiconductor device, which involves joining source electrode (20) and drain electrode (22) to graphene channel (18) on substrate, removing catalyst metal film and coating membrane, forming a gate insulation film on graphene channel, and forming a gate electrode (26) on insulation film; and (2) semiconductor device, which has graphene channel formed on substrate, a primary contact portion consisting of one end portion of channel, secondary contact portion consisting of other end portion of channel, source electrode joined to primary contact portion, drain electrode joined to secondary contact portion, gate insulation film formed on graphene channel, and gate electrode formed on insulation film. DESCRIPTION OF DRAWING(S) - The drawing shows the top view of semiconductor device. Graphene channel (18) Source electrode (20) Drain electrode (22) Gate electrode (26)