▎ 摘　　要

NOVELTY - The light emitting device (1) has an electron-transport layer (13) that is arranged above the substrate (10). A light-emitting layer (20) is composed of a graphene quantum dot layer (15) and a quantum dot layer (17). The graphene quantum dot is fixed on the electron-transport layer. A hole-transport layer (25) is arranged above the light-emitting layer. A quantum well and quantum dot layer are made of indium gallium nitride, indium arsenide, aluminum arsenide and aluminum arsenide. USE - Quantum dot light emitting device e.g. LED used in display, optical communication application and vehicle for lighting. ADVANTAGE - Since graphene quantum dot is fixed on the electron-transport layer and hole-transport layer is arranged above the light-emitting layer, the luminous efficiency of the quantum dot light emitting device can be improved. The power consumption of the quantum dot light emitting device can be reduced. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the quantum dot light emitting device. Quantum dot light emitting device (1) Substrate (10) Electron-transport layer (13) Graphene quantum dot layer (15) Quantum dot layer (17) Light-emitting layer (20) Hole-transport layer (25)