▎ 摘　　要

NOVELTY - Preparing high-quality third-fifth compound substrate involves providing a third group metal-organic source mixed precursor comprising uniformly dispersed nanomaterial, coating third group metal-organic source mixed precursor on a substrate to obtain third group metal-organic source mixed precursor coating layer, placing substrate with coating layer of third group metal-organic source mixed precursor in the metal organic chemical vapor deposition reaction chamber, passing into the third group metal-organic source, performing annealing and recrystallization in the mixed atmosphere of the group fifth element source and reducing gas, forming uniformly distributed nanomaterial and third-fifth group compound nano-growth structure, continuing to grow third-fifth group compound, obtaining third-fifth group compound template layer, and growing on third-fifth compound template layer to obtain third-fifth compound thick film layer to obtain a high-quality third-fifth compound substrate. USE - Method for preparing high-quality third-fifth compound substrate used in photoelectronic device, photoelectric integration, ultra-high-speed microelectronic device. ADVANTAGE - The method can match high-voltage paper electrophoresis to grow third-fifth group compound thick film with different thicknesses by regulating the thickness of the template layer growing by the metal organic chemical vapor deposition process, and prepare high-quality third-fifth group compound substrates with different thicknesses on substrates with different dimension. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of the preparing high-quality gallium nitride substrate. (Drawing includes non-English language text).