▎ 摘　　要

NOVELTY - The method involves providing a semiconductor device, where the semiconductor devices includes a substrate and an epitaxial layer located on the top surface of the substrate. The top surface is provided with at least one P well region. The bottom surface is grinded by a first grinding process to thin the thickness of the base substrate to the first thickness. The second grinding process is used to grind the bottom surface of a base substrate through the second grinding. The thickness is thinned to the second thickness, and the mesh number of the grinding wheels used in the first grinding is less than the mesh numbers of the grinders in the second grinding process. The laser is used for irradiating the bottom surfaces of the bases. The third thickness is decomposed from the third thickness portion of the bottom face of a substrate to be graphene. The graphene is removed to obtain a substrate with a fourth thickness. USE - Method for thinning substrate of silicon carbide Schottky diode used in field of semiconductor technology. Can also be used in high voltage, high temperature environment application which breaks through silicon-based power device voltage and temperature limit. ADVANTAGE - The method reducing the silicon carbide substrate of the SiC Schottky diode firstly through the first grinding process and the second grinding process can be high efficiency, fast reducing the thin substrate, ensuring the production speed of the diode is not too low, irradiating the substrate by laser and decomposing it into a graphene can effectively repair the damage caused by the grinding process to the substrate, reducing the bad influence caused by thinning process to device performance, and obtaining the flat bottom surface of the substrate, and does not cause SiC substrate fragments due to the thinning of the silicon-carbide substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a manufacturing method of the silicon carbide Schottky diode. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart illustrating a method for thinning a substrate of a silicon carbide Schottky diode (Drawing includes non-English language text). S2Following steps S4Executing step