▎ 摘　　要

NOVELTY - The method involves providing a semiconductor structure comprising a substrate (210), a dielectric layer (220) on the substrate, and a metal interconnect layer (230) in the dielectric layer and in contact with the substrate. The method also involves forming a graphene layer (260) on the metal interconnect layer. USE - Manufacturing method of semiconductor interconnect structure (claimed). ADVANTAGE - The graphene layer can insulate a metal from air and prevent the metal from being oxidized by oxygen in the air, so that the queue time of the chemical mechanical polishing (CMP) process can be increased, which is advantageous to semiconductor manufacturing processes and improving the device reliability. The graphene layer prevents the diffusion of a metal, e.g., copper, into a dielectric layer formed on it (e.g., the dielectric layer for use in the next interconnect structure), so that the problems of decreasing k-value of the dielectric and even short circuits caused by metal diffusion into the dielectric can be avoided, thus improving the reliability of the device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a semiconductor interconnect structure. DESCRIPTION OF DRAWING(S) - The drawing is a cross-sectional view illustrating an intermediate stage of an interconnect structure. Substrate (210) Dielectric layer (220) Metal interconnect layer (230) Barrier layer (240) Graphene layer (260)