• 专利标题:   Manufacturing method of embedded graphene PN junction, involves depositing and forming layer of embedded graphene PN junction by chemical vapor deposition on graphene substrate, and forming embedded graphene PN junction on electrode array.
  • 专利号:   CN108878268-A
  • 发明人:   SUN D, HOU X, LIU H
  • 专利权人:   SHANDONG AOTIAN ENVIRONMENTAL PROTECTION
  • 国际专利分类:   H01L021/02, H01L021/04
  • 专利详细信息:   CN108878268-A 23 Nov 2018 H01L-021/02 201902 Pages: 7 Chinese
  • 申请详细信息:   CN108878268-A CN10759564 11 Jul 2018
  • 优先权号:   CN10759564

▎ 摘  要

NOVELTY - The method involves providing (1) a copper substrate. A hexagon embedded first mask pattern is formed (2) on the copper substrate. A layer of metal nickel is deposited (3) on the copper substrate. The first annealing is performed (4) to form a first type ion of copper-nickel alloy. The layer of nickel is deposited (5). The second mask pattern which covers the hexagonal islands is formed (6) to expose metal nickel layer outside the island of hexagon. A second type of ion injection is performed (7) on metallic nickel layer. The copper-nickel alloy layer is polished (9) to form a flat surface to form graphene deposition substrate. The layer of embedded graphene PN junction is formed (10) by chemical vapor deposition on graphene substrate. The embedded graphene PN junction is formed (11) on electrode array. The first type of ions belongs to Boron (B) and sulfur (S) group. The second type of ions belongs to the group of consisting of nitrogen (N), phosphorus (P), and arsenic (As). USE - Manufacturing method of embedded graphene PN junction. ADVANTAGE - The junction area is large which improves the performance of the device. The manufacturing process is simple. DESCRIPTION OF DRAWING(S) - The drawing shows a process step diagram of the manufacturing method of embedded graphene PN junction. (Drawing includes non-English language text) Step for providing copper substrate (1) Step for forming hexagon embedded first mask pattern on the copper substrate (2) Step for depositing layer of metal nickel on the copper substrate (3) Step for performing first annealing to form a first type ion of copper-nickel alloy which is implanted after thinning (4) Step for depositing layer of nickel (5) Step for forming second mask pattern which covers the hexagonal islands to expose the metal nickel layer outside the island of hexagon (6) Step for performing second type of ion injection on the metallic nickel layer outside the island (7) Step for polishing copper-nickel alloy layer to form a flat surface to form a graphene deposition substrate (9) Step for forming layer of embedded graphene PN junction by chemical vapor deposition on graphene substrate (10) Step for forming embedded graphene PN junction on the electrode array (11)