▎ 摘 要
NOVELTY - The method comprises: forming a layer of first material (12) on a part of a surface of a first substrate (10), where a first surface of the layer of material is in contact with the first substrate to define an interface (16); attaching a second substrate (18) to a second surface of the layer of material; forming bubbles (22) at the interface; and applying mechanical force, where the second substrate and the layer of material are jointly separated from the first substrate. The layer of material has thickness of less than 1 nm. USE - The method is useful for transferring graphene films from a substrate to another substrate, during manufacturing of solid-state devices e.g. ballistic transistors and spin transistors, touch displays and photovoltaics, chemical sensors, nanopore filters, impermeable coatings for corrosion and/or chemical protection, ultracapacitors, and transmission electron microscopy support. ADVANTAGE - The method is capable allowing reuse of metal substrates for future graphene formation to reduce waste and improve economics of the process, allowing for a scalable, continuous process for graphene film creation, substrate transfer and/or multi-layer structure fabrication, allowing graphene films to be placed on nearly any smooth surface, providing a process, which can transfer graphene to either flexible or rigid substrates and allowing creation and transfer of large area sheets of graphene film. DETAILED DESCRIPTION - The method comprises: forming a layer of first material (12) on a part of a surface of a first substrate (10), where a first surface of the layer of material is in contact with the first substrate to define an interface (16); attaching a second substrate (18) to a second surface of the layer of material; forming bubbles (22) at the interface; and applying mechanical force, where the second substrate and the layer of material are jointly separated from the first substrate. The method further comprises forming a layer of a second material on a part of an opposing surface of the first substrate, attaching the layer of second material to a third substrate, removing the second substrate, attaching a first leader film to the second substrate and the layer of second material, and attaching a second leader film to the first substrate. The layer of material has thickness of less than 1 nm. The material layer comprises a single atomic layer or a set of atomic layers of graphene, and is formed on the first substrate by chemical vapor deposition. The second substrate is attached to the layer of material by one of: adhering through adhesive; laminating; coating; spraying and dipping. The bubbles forming step comprises: preparing solution comprising water and electrolyte; immersing the interface in the solution; forming a cathode at the first substrate, the layer of material, and the second substrate; disposing an anode in the solution at a location remote from the cathode; connecting a power source to the cathode and anode, and passing electric current through the solution generated by the power source. The electric current has a current density of 0.1-2 A/cm2. The anode is placed near the point of separation. The mechanical force applying step comprises pulling the first substrate in a first direction, and pulling the second substrate along with the layer of material in a second direction, where the first and second directions diverge from one another to define an angle of separation of 1-90 degrees. One of the first or second substrate is less flexible than the other substrate. The first substrate is provided in a form of a supply roll. The second substrate is applied to the second surface of the layer of first material in a continuous manner. The second substrate and the layers of material are collected in a continuous manner on a first pickup roll. The first substrate is collected in a continuous manner on a second pickup roll. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a method for transferring graphene films from a substrate to another. First substrate (10) Layer of first material (12) Interface (16) Second substrate (18) Bubbles. (22)