• 专利标题:   Quantum point compound, useful in e.g. photo-electric material, comprises graphene oxide, and chalcopyrite dot that is dispersed in graphene sheet in form of single layer and aggregated to form three-dimensional aggregates.
  • 专利号:   CN102965105-A, CN102965105-B
  • 发明人:   WANG M, GAO F, YUE W
  • 专利权人:   PLASMA PHYSICS INST CHINESE ACAD SCI
  • 国际专利分类:   B82Y030/00, C01B031/04, C01G015/00, C09K011/65
  • 专利详细信息:   CN102965105-A 13 Mar 2013 C09K-011/65 201360 Pages: 9 Chinese
  • 申请详细信息:   CN102965105-A CN10472353 21 Nov 2012
  • 优先权号:   CN10472353

▎ 摘  要

NOVELTY - Quantum point compound formed by solvent-thermal synthesis method in a high pressure kettle, comprises a graphene oxide, and chalcopyrite (CuInS2) dot that has a particle size of 2-5 nm, is dispersed in a graphene sheet in a form of a single layer and aggregated to form three-dimensional aggregates and has an atom ratio of copper to indium to sulfur (Cu:In:S) of 1:1.3:1.8. USE - The quantum dot compound is useful in a photo-electric material, a photovoltaic material and an organic-inorganic composite material. ADVANTAGE - The quantum dot compound can be prepared in a simple, an environmentally-friendly and an easy manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparing the quantum point compound comprising dispersing the graphene oxide in ethanol, adding copper (II) acetate, indium acetate and thiourea into ethanol in the high pressure kettle at a temperature of 150-170 degrees C and then reacting for 4-8 hours, and reducing the temperature of the solution to 75-85 degrees C to obtain hydrazine compound and then washing and drying, where a mass ratio of graphite oxide to copper (II) acetate is 1:1-4 and a mass ratio of copper (II) acetate to indium acetate to amine to thiourea is 1:1:12:4.