▎ 摘　　要

NOVELTY - Preparation of single crystal graphene involves ultrasonically cleaning a metal substrate and drying, adhering graphite single-crystal graphene as adhesive tear tape to silicon or silicon/silicon dioxide composite layer and then transferring to the metal substrate, providing the metal substrate into chemical vapor deposition apparatus, controlling temperature of metal substrate, supplying carbon source gas, reacting, then supplying reducing gas, controlling the reaction chamber pressure, reacting, cooling metal substrate, and removing metal oxide on the substrate. USE - Preparation of single crystal graphene (claimed). ADVANTAGE - The method enables preparation of single crystal graphene by simple process. DETAILED DESCRIPTION - Preparation of single crystal graphene involves ultrasonically cleaning a metal substrate using deionized water, acetone and ethanol and drying, adhering graphite single-crystal graphene as adhesive tear tape to silicon or silicon/silicon dioxide composite layer by a micro mechanical force method and then transferring to the metal substrate as the single-crystal graphene seed crystal layer, providing the metal substrate into chemical vapor deposition apparatus under vacuum of 1 mTorr, controlling temperature of metal substrate to 200-1200 degrees C, supplying carbon source gas at a flow rate of 5-1000 sccm, reacting at 200-1200 degrees C for 5-60 minutes, then supplying reducing gas with a flow rate of 0.5-1000 sccm, preferably 50-500 sccm, controlling the chemical vapor deposition apparatus reaction chamber pressure to 0.01-100 Torr, reacting for 5-600 minutes, cooling metal substrate at room temperature for 2-500 minutes, and removing metal oxide on the substrate.