▎ 摘　　要

NOVELTY - Preparation of flexible and transparent graphene/silicon metal-semiconductor-metal photodetector involves etching silicon thin film of silicon substrate into rectangular silicon bar by deep level reaction etching machine, where silicon substrate comprises silicon thin film and silica isolation layer and silicon substrate; positioning on both sides of silicon bar on surface of silicon dioxide, and depositing gold electrode through electron beam evaporation technique; and preparing monocrystalline graphene film on copper foil substrate by chemical vapor deposition. USE - Method for preparing flexible and transparent graphene/silicon metal-semiconductor-metal photodetector (claimed). ADVANTAGE - The method has simple preparation technology, low cost, high response degree, fast response speed, large internal gain, and small switch ratio. DETAILED DESCRIPTION - Preparation of flexible and transparent graphene/silicon metal-semiconductor-metal photodetector comprises etching silicon thin film of silicon substrate into rectangular silicon bar by deep level reaction etching machine, where silicon substrate comprises silicon thin film and silica isolation layer and silicon substrate; positioning on both sides of silicon bar on surface of silicon dioxide, and depositing gold electrode through electron beam evaporation technique; preparing monocrystalline graphene film on copper foil substrate by chemical vapor deposition; covering upper surface of silicon dioxide insulating layer; and patterning monocrystalline graphene film into interdigitated pattern by photolithography, removing excess graphene by plasma etching, covering patterned monocrystalline graphene film, covering upper surface of patterned device with polycarbonate film, scraping polycarbonate film, and etching silicon substrate in buffered oxide etch.