• 专利标题:   Manufacturing graphene laminated structure for use in thin film transistor, memory element, transparent electrode, optical detector, semiconductor element or light emitting diode, involves forming graphene layer on metallic foil.
  • 专利号:   KR2016043797-A
  • 发明人:   LEE S S, AN K S, LIM J, MYUNG S
  • 专利权人:   KOREA RES INST CHEM TECHNOLOGY
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   KR2016043797-A 22 Apr 2016 C01B-031/04 201633 Pages: 13 English
  • 申请详细信息:   KR2016043797-A KR138458 14 Oct 2014
  • 优先权号:   KR138458

▎ 摘  要

NOVELTY - Graphene laminated structure manufacturing involves forming graphene layer on a metallic foil, immersing the formed graphene layer in a metal catalyst solution for developing growth seed, and then forming another graphene layer on the developed growth seed to give the finished graphene laminated structure. USE - Method for manufacturing graphene laminated structure for use in thin film transistor, memory element, transparent electrode, optical detector, semiconductor element or light emitting diode (claimed). ADVANTAGE - The method manufactures the graphene laminated structure in a simple and cost-effective manner with improved physical properties by preventing dislocation and grain boundary, and excellent permeability and remarkably improved electrical conductivity without reducing transmission rate. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic flowchart of the graphene laminated structure manufacturing method. (Drawing includes non-English language text).