▎ 摘　　要

NOVELTY - Method for preparing graphene film/silicon composite material, involves using natural flake graphite as raw material, preparing multi-layer graphene slurry using electrochemical non-oxidation layer separation method, scraping and drying on substrate, and carbonizing and graphitizing to obtain graphene thin film, taking prepared graphene film as substrate, sequentially growing bonding material and silicon material on substrate material using magnetron sputtering method, and enabling silicon material in layered wrapping structure of bonding material to obtain graphene film/silicon composite material, where the bonding material comprises nickel, cobalt and/or titanium. USE - The method is used for preparing graphene film/silicon composite material used in ion energy storage (all claimed). ADVANTAGE - The method adopts natural flake graphite as raw material and magnetron sputtering technology to combine silicon and nickel materials with highly conductive graphene film base material.