▎ 摘　　要

NOVELTY - Manufacture of reduced graphene oxide involves pre-treating an expandable graphite by dispersing the expandable graphite in a dispersion solvent, pulverizing, and heat-treating the pulverized expandable graphite at 700-1200 degrees C, preparing graphene oxide by acid-treating the pre-treated expandable graphite, and reducing the graphene oxide. The expandable graphite comprises 89.83-92.03 atomic carbon, 7.08-9.28 atomic% oxygen, and 0.79-0.99 atomic% sulfur. USE - Manufacture of reduced graphene oxide during manufacture of conductive thin film of electronic device such as supercapacitor, thin-film transistor, secondary battery, fuel cell, solar cell, and display device (all claimed). ADVANTAGE - The method produces reduced graphene oxide having electroconductivity and resistivity improved by more than 10 times compared with the reduced graphene oxide produced by chemical exfoliation using the existing natural graphite. The conductive thin film produced using the reduced graphene oxide has excellent peelability, electrical property, and scratch resistance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of a conductive thin film, which involves forming a graphene oxide thin film by coating the graphene oxide on a substrate surface and preparing a reduced graphene oxide thin film by reducing the graphene oxide thin film.