• 专利标题:   Preparation of graphene conductive thin film for preparing graphene/silicon multilayer composite anode material involves formulating graphene solution and depositing on metal electrode surface using electron beam vapor deposition machine.
  • 专利号:   CN103924198-A, CN103924198-B
  • 发明人:   LIN J, WANG W, CHEN M, HOU Z
  • 专利权人:   FUJIAN NUOXI NEW MATERIAL TECHNOLOGY CO, FUJIAN NORCY NEW MATERIAL TECHNOLOGY CO LTD
  • 国际专利分类:   C23C014/06, C23C014/30, H01M004/1393
  • 专利详细信息:   CN103924198-A 16 Jul 2014 C23C-014/30 201467 Pages: 8 Chinese
  • 申请详细信息:   CN103924198-A CN10170876 25 Apr 2014
  • 优先权号:   CN10170876

▎ 摘  要

NOVELTY - Graphene conductive thin film is prepared by formulating 0.01-6 wt.% graphene solution and depositing on metal electrode surface using electron beam vapor deposition machine with vacuum degree of 10-7-10-4 Pa and substrate temperature of 100-500 degrees C. USE - Preparation of graphene conductive thin film for preparing graphene/silicon multilayer composite anode material (claimed) used for lithium battery. ADVANTAGE - Graphene conductive thin film is thin and dense and has high bulk density, large area, flat surface, low contact resistance with metal electrode surface, and electron beam vapor deposition machine has large coating area and fast coating speed. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for production of graphene/silicon multilayer composite anode material which involves alternately coating metal electrode surface greater than or equal to 2 layers of graphene conductive thin films and silicon conductive thin films in which 1st thin film layer close to metal electrode is graphene conductive thin film.