▎ 摘　　要

NOVELTY - The modulator has a base layer (1) whose upper end surface is fixed with two light waveguide layers (2, 3). A cross section surface of one of the light waveguide layers is a rectangular shape. The light waveguide layers are fixed with three isolation unit layers (41-43) and two graphene layers (51, 52). The graphene layers are separated from a left side surface of one of the light waveguide layers. The other light waveguide layer and the base layer are connected with two insulation layers (6, 7). The isolation unit layers and the insulation layers are made of an insulation material. USE - Graphene polarization based TE and TM light mode absorb-type modulator. ADVANTAGE - The modulator avoids TE and TM mode light absorb factor caused by dynamic tuning consistent, thus realizing non-polarizing beam splitter and light wave sensitive modulation function. DETAILED DESCRIPTION - The insulation material is silicon oxide and silicon nitrogen oxide or boron nitride. The light waveguide layers are made of silicon, germanium, silicon germanium alloy, silicon nitride, and III-V semiconductor and II-IV semiconductor materials. The light waveguide layers are provided with two electrodes that are made of gold, silver, copper, platinum, titanium, nickel, cobalt and palladium materials. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a graphene polarization based TE and TM light mode absorb-type modulator. Base layer (1) Light waveguide layers (2, 3) Insulation layers (6, 7) Isolation unit layers (41-43) Graphene layers (51, 52)