▎ 摘　　要

NOVELTY - Preparing graphene-based two-dimensional heterojunction involves stripping the hexagonal boron nitride single crystal onto the silicon wafer coated with thermal oxide, and peeling of graphene to a polymer press plate composed of a water-soluble layer and a polymethyl methacrylate film. The water-soluble polymer is dissolved, the silicon wafer substrate sinks to the bottom of the bath, and the extremely hydrophobic polymethyl methacrylate separates and floats on the water surface. The microscope operation is used to precisely align the graphene with the hexagonal boron nitride so that the two are in contact. The polymethyl methacrylate film was dissolved in the organic solvent acetone, and then the sample was annealed in a flowing hydrogen/argon (H2/Ar) gas environment. USE - The method is useful for preparing two-dimensional heterojunction based on graphene. ADVANTAGE - The graphene device prepared by the method is stable in structure, tight in combination, excellent in performance, and can be used for preparing high-quality graphene device.