• 专利标题:   Graphene/lead sulfide infrared detector, has substrate upwards orderly covered with graphene film, metal electrode, lead sulfide seed layer, lead sulfidenanometre film layer, where two ends of graphene film are paved with metal electrode.
  • 专利号:   CN111129198-A, CN211480067-U
  • 发明人:   LENG C, SHEN J, NIE C, ZHANG Z, YANG J, TANG L, FENG S, WEI X, SHI H
  • 专利权人:   CHINESE ACAD SCI CHONGQING GREEN INTEL
  • 国际专利分类:   H01L031/032, H01L031/09, H01L031/18
  • 专利详细信息:   CN111129198-A 08 May 2020 H01L-031/09 202045 Pages: 8 Chinese
  • 申请详细信息:   CN111129198-A CN10026016 10 Jan 2020
  • 优先权号:   CN10026016, CN20056369

▎ 摘  要

NOVELTY - The detector has a substrate upwards orderly covered with a graphene film, a metal electrode, a lead sulfide seed layer, a lead sulfidenanometre film layer, where two ends of the graphene film are respectively paved with the metal electrode. The metal electrode is provided with a chromium that is formed on the graphene film. A gold or silver film is formed on the chromium. USE - Graphene/lead sulfide infrared detector. ADVANTAGE - The dense, flat, and uniform high-quality lead sulfide nanocrystalline film layer is obtained based on seed layer assisted growth of lead sulfide nanocrystals, and finally a high-response infrared detector is realized. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a graphene/lead sulfide infrared detector.