• 专利标题:   Doping method involves stacking sacrificial layer on doped layer, arranging doping material on the sacrificial layer, arranging electrodes on doping material and doped layer, and doping doping material into doped layer.
  • 专利号:   US2021140053-A1, KR2021057535-A, KR2330920-B1, US11512396-B2
  • 发明人:   SON K, KIM T, SON A
  • 专利权人:   UNIV KOREA RES BUSINESS FOUND, UNIV KOREA RES BUSINESS FOUND
  • 国际专利分类:   C23C028/00, H01L021/3215, H01L021/02, H01L021/225, H01L021/265, H01L021/3115, C04B041/00, C23C010/28, C25D015/00
  • 专利详细信息:   US2021140053-A1 13 May 2021 C23C-028/00 202150 English
  • 申请详细信息:   US2021140053-A1 US941822 29 Jul 2020
  • 优先权号:   KR144399

▎ 摘  要

NOVELTY - Doping method using an electric field involves stacking a sacrificial layer (300) on a doped layer (200), arranging a doping material (400) on the sacrificial layer, arranging electrodes on the doping material and doped layer, and doping the doping material into the doped layer through oxidation, diffusion and reduction of the doping material by the electric field. USE - Doping method. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for thin layer doped with doping material. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the doping process using an electric field. Substrate (100) Doped layer (200) Sacrificial layer (300) Doping material (400)