▎ 摘　　要

NOVELTY - Epitaxially growing large area gallium nitride comprises (a) preparing a copper(111) single crystal substrate (1), (b) growing a graphene two-dimensional material layer (2) on the copper(111) single crystal substrate, (c) epitaxially growing a gallium nitride film (3) on the grown grapheme two-dimensional material layer and (d) cooling the gallium nitride film to room temperature to obtain the flat gallium nitride film. USE - The method is useful for epitaxially growing large area gallium nitride used in field of semiconductor. ADVANTAGE - The method produces good quality gallium nitride epitaxial film with low dislocation density and easy peeling. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the gallium nitride product. 1Copper (111) single crystal substrate 2Graphene two-dimensional material layer 3Gallium nitride film