▎ 摘　　要

NOVELTY - Integrated circuit comprises a semiconductor substrate; at least one source region comprising a first doped semiconductor material; at least one drain region comprising a second doped semiconductor material; at least one gate formed between the at least one source region and the at least one drain region; and a nanosheet formed between the semiconductor substrate and the at least one gate configured as a channel for the at least one gate, where the nanosheet has a first region having a first width and a second region having a second width and the first width is less than the second width. USE - As integrated circuit. ADVANTAGE - The integrated circuit can provide the fin field-effect transistor with varying width nanosheet and can improve device power consumption, speed, and integration density. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a fin field-effect transistor comprising a semiconductor substrate; at least one source region comprising semiconductor material doped to form an n-type region, where the source region having a height greater than a height of the semiconductor substrate; at least one drain region comprises semiconductor material doped to form a p-type region, where the drain region having a height greater than the height of the semiconductor substrate; at least one gate formed between the at least one source region and the at least one drain region, the at least one gate having a height greater than the height of the semiconductor substrate; and a nanosheet formed between the semiconductor substrate and the at least one gate, between the semiconductor substrate and the at least one source region, and between the semiconductor substrate and the at least one drain region, where the nanosheet has a first region with a first width under the at least one gate and a second region with a second width under the at least one source region and the at least one drain region, wherein the first width is different than the second width; and (2) a semiconductor device comprising a substrate; source regions; drain regions; gates; and at least one nanosheet formed between the substrate and the gates, where the nanosheet has a first width region and a second width region, the first width region is narrower than the second width region and the nanosheet is a two-dimensional material.