▎ 摘　　要

NOVELTY - A graphene/dielectric material preparing method involves utilizing ion beam sputtering or electron beam evaporation, plating dielectric material substrate surface with nickel layer, followed by dispersing graphite powder in ethanol, and coating on the surface of nickel film, placing in the reaction chamber, subjecting to heat treatment, growing the graphene layer between the nickel layer and the dielectric material interface after naturally cooling, placing the substrate in ferric chloride solution, eroding nickel layer and subjected to hydride vapor phase epitaxy to obtain finished product. USE - Method for preparing graphene/dielectric material. ADVANTAGE - The method enables preparing the graphene/dielectric material with better effect of reducing the extension cost, in simple and cost-effective manner.