▎ 摘　　要

NOVELTY - The transistor (11) has a gate length direction which is the direction from a source electrode (16) to a drain electrode (17). An insulating base (12) has a first surface (12a). A graphene film (13) is arranged on the first surface. A strip shape extends in a gate width direction perpendicular to the gate length direction. A gate insulating film (14) is arranged on a second surface (13a) of the graphene film. The drain electrode is mounted on a base portion. A gate electrode (15) has a band shape extending in the gate width direction. An insulating layer (21) is arranged on the second surface, so as to expose a portion of the second surface. USE - Transistor e.g. MOSFET. ADVANTAGE - The stable action can be secured and high-frequency characteristics can be improved. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a transistor. Transistor (11) Insulating base (12) First surface (12a) Graphene film (13) Second surface (13a) Gate insulating film (14) Gate electrode (15) Source electrode (16) Drain electrode (17) Insulating layer (21)