▎ 摘　　要

NOVELTY - Plasma growth of graphene by plasma enhanced chemical vapor deposition involves putting the quartz of thickness 2x 2cm in the cleaning solution. The obtained product is heated at 60 degrees C after soaking. The obtained soaked product is taken out. The obtained soaked product is cleaned by using acetone and deionized water. The obtained cleaned product is dried. The ratio of sulfuric acid and hydrogen peroxide is 2:1. The multiple target evaporation thin film device is used. The high purity target is used. USE - Method for plasma growth of graphene by plasma enhanced chemical vapor deposition (claimed). ADVANTAGE - The method enables plasma growth of graphene by plasma enhanced chemical vapor deposition in a cost-effective manner with wide applicability. DETAILED DESCRIPTION - Plasma growth of graphene by plasma enhanced chemical vapor deposition involves putting the quartz of thickness 2x 2cm in the cleaning solution. The obtained product is heated at 60 degrees C after soaking. The obtained soaked product is taken out. The obtained soaked product is cleaned by using acetone and deionized water. The obtained cleaned product is dried. The ratio of sulfuric acid and hydrogen peroxide is 2:1. The multiple target evaporation thin film device is used. The high purity target is used. The deposition conditions are as follows: The substrate temperature is 190-210 degrees C. The evaporation pressure is 2x 10-3 Pascal. The quartz plate is coated with film. The obtained product is kept in a tubular furnace. The tubular furnace is introduced with hydrogen and argon. The temperature of the raised at 600-1000 degrees C. The obtained product is annealed. The methane is used as a growth precursor. The gas concentration is 10-100sccm. The obtained product is rapidly cooled at room temperature. The obtained sample is taken out. The obtained sample is etched in a etching solution. The obtained product is washed with deionized water. The obtained product is dried using air gun to form large area without transfer of high quality graphene structure. The etching liquid comprises copper sulfate, hydrochloric acid and water. The ratio of copper sulfate, hydrochloric acid and water is 1g:5ml:5ml.