▎ 摘　　要

NOVELTY - Two-dimensional silicon carbide ultra-thin nano structure is prepared by using silicon powder as raw material and graphene as template, adding dopant, and reacting in mixed molten salt medium of sodium chloride and sodium fluoride at low temperature of 1050-1200 degrees C under specified atmosphere. USE - Two-dimensional silicon carbide ultra-thin nano structure for high frequency and high power microelectronic devices, and lithium ion battery anode materials used in high temperature, high radiation and strong corrosiveness. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the two-dimensional silicon carbide ultra-thin nanostructure, which involves adding graphene and silicon powder as raw materials, in a molar ratio of 1:1, adding 0.01-1 wt.%. dopant comprising boron, aluminum, gallium or beryllium, in case of preparing p-type silicon carbide, mixing raw materials with molten salt, in a ratio of 1:4-1:10, in graphite crucible for 0.1-1 hour, placing the crucible containing raw material in an oven at 80-150 degrees C for 2-10 hours for drying, placing the dried crucible containing raw material in a tube furnace, evacuating the atmosphere in tube furnace for 0.1-0.5 hour for removing air, heating from room temperature to 600 degrees C at 10 degrees C/minute, heating to 1050-1200 degrees C at 5 degrees C/minute, heat preserving for 0.5-6 hours for molten salt synthesis reaction, cooling naturally to room temperature, taking out the graphite crucible from the tube furnace, purifying the reaction product, dissolving, centrifuging, and filtering the product-containing molten salt repeatedly 3-6 times using water, removing the molten salt used, and drying. During the synthesis process, the atmosphere is nitrogen-protected when preparing n-type silicon carbide, and the atmosphere is argon-protected when preparing p-type silicon carbide. No dopant is added during preparing n-type silicon carbide.