▎ 摘　　要

NOVELTY - The method involves depositing graphene on a deformable metal foil-type lead frame. Chemical vapor deposition (CVD) and inductance coupling plasma-CVD (ICP-CVD) are applied to a light emitting device. The graphene is inserted in a Quartz tube. Thickness of the graphene is 1~100 micrometer. The light emitting device is provided with the graphene. A reflective metal is plated on the deformable metal foil-type lead frame. The light emitting device is provided with the lead frame that is made of copper (Cu), silver (Ag) or nickel (Ni). USE - Heat-treated light emitting device manufacturing method. ADVANTAGE - The method enables improving electric conductance process and thermal conductance process. The method enables providing simple process. The method enables improving protection process and reliability. The method enables improving manufacturing process of the light emitting device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a light emitting device. DESCRIPTION OF DRAWING(S) - The drawing shows a top perspective view of a heat-treated light emitting device.