▎ 摘　　要

NOVELTY - The method involves providing a copper structure (28') contained within opening present in a dielectric material (12). The copper structure is provided with an uppermost surface that is coplanar with an uppermost surface of the material. The graphene cap (24') is located at the uppermost surface of structure. The graphene cap is provided with edges that are vertically coincident with edges of the copper structure. The graphene is transferred from the copper foil, and the graphene is patterned, so that the edges are coincided with vertical sidewall surfaces of the copper structure. USE - Method for forming interconnect structure for integrated microelectronic circuit. ADVANTAGE - The electro-migration (EM) resistance can be improved. The electrical resistivity of the copper can be improved. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view illustrating the structure for forming dielectric material portion adjacent to the graphene-capped copper structure. Substrate (10) Dielectric material (12) Diffusion barrier materials (18',20') Graphene cap (24') Copper structure (28')