▎ 摘　　要

NOVELTY - Processing graphene thin film material, comprises e.g. (i) taking a substrate sample coated with a graphene two-dimensional thin film material or oligolayer graphene two-dimensional thin film material placed on a carrier sample stage of a processing device of the graphene thin film material and adjusting the carrier sample stage to a processing positioning point; and (ii) setting the processing parameters of the laser beam below the energy threshold of the graphene two-dimensional thin film material, focusing the laser beam on the surface of the substrate sample, focusing the laser beam on the surface of the graphene two-dimensional thin film material on the substrate and performing selective scanning modification of the graphene two-dimensional thin film material covered by the surface of the substrate sample with a laser beam with a set parameter for increasing number of dangling bonds on surface of graphene two-dimensional thin film material covered by preset area. USE - The graphene film material is useful in field-effect transistor, optoelectronics and microprocessor field. ADVANTAGE - The method: is simple, controllable, suitable for mass production and utilized for automated macro production; has good repeatability; produces product having good controllability in terms of size and thickness and simultaneously maintains high yield and quality; does not require a transfer process; and is compatible with the existing silicon planar processing process. DETAILED DESCRIPTION - Processing graphene thin film material, comprises (i) taking a substrate sample coated with a graphene two-dimensional thin film material or oligolayer graphene two-dimensional thin film material placed on a carrier sample stage of a processing device of the graphene thin film material and adjusting the carrier sample stage to a processing positioning point; and (ii) setting the processing parameters of the laser beam below the energy threshold of the graphene two-dimensional thin film material, focusing the laser beam on the surface of the substrate sample, focusing the laser beam on the surface of the graphene two-dimensional thin film material on the substrate and performing selective scanning modification of the graphene two-dimensional thin film material covered by the surface of the substrate sample with a laser beam with a set parameter for increasing the number of dangling bonds on the surface of the graphene two-dimensional thin film material covered by the preset area, transferring the laser scanned substrate sample into an atomic layer deposition chamber, depositing the surface of the laser scanned substrate sample using an atomic layer, performing selective film deposition until the scanned area completes the film growth of the required thickness in the structural area to obtain the designed pattern structure or setting the processing parameters of the laser beam higher than the energy threshold of the graphene two-dimensional thin film material, focusing the laser on the surface of the substrate sample, etching the selective atomic layer of the oligolayer graphene two-dimensional thin film material covered by the surface of the substrate sample with a laser beam with a set parameter until the scanned area completes the required etching depth of the structural area to form designed pattern structure.