▎ 摘　　要

NOVELTY - The utility model claims a device for preparing high-conductivity graphene metal composite material by plasma auxiliary. The device comprises: a plasma auxiliary decomposition chamber, communicate sample inlet chamber and a hot-pressure chamber, and located between the sample inlet chamber and the hot-pressure chamber; the sample feeding chamber is provided with a sample feeding mechanism, the plasma auxiliary decomposing chamber is provided with a plasma generator and a first heating mechanism, the hot pressing chamber is provided with a hot pressing mechanism and a second heating mechanism; and a gas circuit mechanism for introducing the gaseous carbon source and the auxiliary gas into the sample chamber, the plasma auxiliary decomposition chamber and the hot-pressure chamber. the plasma generator can accelerate the collision frequency between the carbon source molecules and accelerate the cracking, absorbing and nucleating, so as to reduce the temperature needed by graphene growth, accelerating the speed of graphene growth, quickly absorbing the carbon-containing intermediate quickly decomposed on the surface of the metal substrate, which is good for multi-layer nucleation and growth, so as to increase the graphene growth layer, and reduce the energy consumption and improve the productivity.