▎ 摘　　要

NOVELTY - A quantum hall device preparing method involves forming first superconducting thin film layer on substrate, covering first superconducting thin film layer with first dielectric thin film layer and forming graphene layer or semiconductor thin film layer on surface of the first dielectric thin film layer. The resultant surface layer is formed by second dielectric thin film layer and second superconducting thin film layer to obtain layered substrate. The layered substrate is formed by metal electrode, which is in contact with graphene layer or semiconductor thin film layer. USE - Method for preparing quantum hall device. ADVANTAGE - The method enables preparing the quantum hall device with high speed, low power consumption and better effect of reducing technical difficulty of device fabrication. DETAILED DESCRIPTION - A quantum hall device preparing method involves forming a first superconducting thin film layer on a substrate, covering the first superconducting thin film layer with a first dielectric thin film layer and forming a graphene layer or a semiconductor thin film layer having predetermined pattern on the surface of the first dielectric thin film layer. The resultant surface layer is formed by a second dielectric thin film layer and a second superconducting thin film layer from bottom to top to obtain a layered substrate. The layered substrate is formed by a metal electrode, which is in contact with the graphene layer or the semiconductor thin film layer.