▎ 摘　　要

NOVELTY - Growing large-domain graphene by using hexagonal boron nitride as a seed involves providing substrate. The hexagonal boron nitride is dissolved in the solvent. The obtained mixture is stirred ultrasonically treating the boron nitride particles uniformly dispersed. The obtained mixture is kept stand. The hexagonal boron nitride solution is sprayed onto the surface of the substrate to obtain substrate coated with hexagonal boron nitride. The coated substrate of hexagonal boron nitride is kept in a chemical vapor deposition tubular furnace. USE - Method for growing large-domain graphene by using hexagonal boron nitride as a seed (claimed). ADVANTAGE - The method enables to grow large-domain graphene by using hexagonal boron nitride as a seed with improved quality of graphene growth. DETAILED DESCRIPTION - Growing large-domain graphene by using hexagonal boron nitride as a seed involves providing substrate. The hexagonal boron nitride is dissolved in the solvent. The obtained mixture is stirred ultrasonically treating the boron nitride particles uniformly dispersed. The obtained mixture is kept stand. The hexagonal boron nitride solution is sprayed onto the surface of the substrate to obtain substrate coated with hexagonal boron nitride. The coated substrate of hexagonal boron nitride is kept in a chemical vapor deposition tubular furnace. The obtained product is vacuumized and heated after filling high pure argon and hydrogen. The temperature of the obtained product is raised at 950-1200 degrees C to carry out hydrogen etching. The carbon source gas after hydrogen etching is introduced. The insulating nitride is central to grow graphene. The obtained product is cooled at 600-700 degrees C under the inert atmosphere.