▎ 摘　　要

NOVELTY - The manufacturing method involves forming a trench (54) in an insulating film (51,53), and forming carbon on the insulating film to fill an inside of the trench. A catalytic material is formed on the carbon, and heat treatment is performed on the carbon to turn the carbon into graphene (55A) stacked in layers. The catalytic material and portion of the graphenes are removed on the insulating film to make the graphenes remain only in the trench. The inside of the trench of insulating film is directly filled with the graphenes. USE - Manufacturing method for wiring structure. ADVANTAGE - Reduces the electric resistance and thermal resistance of the graphene wiring since the graphene wiring is formed only of the multilayer graphene without using another structure material. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the manufacturing method for semiconductor device. Semiconductor substrates (11) Component isolation structures (16) Insulating film (51,53) Trench (54) Graphenes (55A)