• 专利标题:   Preparing nano crystalline silver-loaded microcrystalline graphene composite useful for transistors and sensors, comprises e.g. taking microcrystalline graphite, dissolving in water, reacting and treating under heat.
  • 专利号:   CN107761054-A, CN107761054-B
  • 发明人:   LI L, LIN Q
  • 专利权人:   HUNAN GONSION GRAPHITE TECHNOLOGY CO LTD
  • 国际专利分类:   B82Y030/00, B82Y040/00, C01B032/184, C23C014/18, C23C014/30, C23C014/58
  • 专利详细信息:   CN107761054-A 06 Mar 2018 C23C-014/18 201820 Pages: 8 Chinese
  • 申请详细信息:   CN107761054-A CN11043094 31 Oct 2017
  • 优先权号:   CN11043094

▎ 摘  要

NOVELTY - Preparing nano crystalline silver-loaded microcrystalline graphene composite comprises e.g. (i) taking microcrystalline graphite; (ii) dissolving microcrystalline graphite oxide in water and carrying out secondary ultrasonic dispersion; (iii) cleaning substrate and degassing; (v) taking silver and introducing silver reactive gas source; (vi) reducing nano-silver-loaded microcrystalline graphite oxide; and (vii) treating nano crystalline silver-loaded microcrystalline graphene composite material under heat. USE - The graphene composite is useful for transistors and sensors (claimed). ADVANTAGE - The composite material has high activity and adsorption, and maintains stability and longevity of adsorption. DETAILED DESCRIPTION - Preparing nano crystalline silver-loaded microcrystalline graphene composite comprises (i) taking microcrystalline graphite, preparing microcrystalline graphite oxide by modified Hummers method; (ii) dissolving microcrystalline graphite oxide in water and carrying out secondary ultrasonic dispersion to obtain microcrystalline graphite oxide solution; (iii) cleaning substrate, drying, treating surface with a coupling agent and immersing in the microcrystalline graphite oxide solution to obtain a microcrystalline graphite oxide substrate; (iv) transferring obtained microcrystalline graphite oxide substrate into an atomic deposition chamber and degassing with an inert gas for 10 minutes, where vacuum degree of the ultra-vacuum reaction chamber is adjusted to 10-5 Pa at 500-600 degrees C; (v) taking silver as a target material, forming silver reactive gas source by electron beam bombardment evaporation, introducing into a deposition chamber for 20-100 ns, where inert gas is further introduced for 50-200 nano seconds, repeating steps for 5 to 20 minutes, introducing silver reactive gas source and inert gas on the microcrystalline graphite oxide substrate to form nano silver and a microcrystalline graphite oxide composite loaded with nano silver; (vi) reducing nano-silver-loaded microcrystalline graphite oxide composite material in helium vapor, reacting, washing with deionized water and drying at low temperature; and (vii) treating nano crystalline silver-loaded microcrystalline graphene composite material under heat for 1 hour at 200-220 degrees C, where the first ultrasonic dispersion temperature in step (ii) is carried out at 30-50 degrees C, at 10000-25000 Hz, at flow rate 1-4 m3/hour, circulating at 1000-2000 revolutions/minute, carrying out ultrasonic dispersion for 0.5-2 hours and carrying out second ultrasonic dispersion at 30-50 degrees C at 18,000-25,000 Hz, flow rate is 2-5 m3/hour, circulating at 1000-2000 revolutions/minute for 2-5 hours. An INDEPENDENT CLAIM is also included for nano crystalline silver-loaded microcrystalline graphene composite material, prepared as mentioned above.