• 专利标题:   Forming graphene on silicon substrate for electronic device, comprises providing silicon wafer having growth surface free of native oxides in reaction chamber, and nitriding growth surface with nitrogen-containing gas with wafer.
  • 专利号:   DE102021124690-A1, US2022102501-A1, GB2599135-A, GB2600230-A, GB2599135-B
  • 发明人:   DIXON S, GUINEY I, THOMAS S, THOMAS S C S
  • 专利权人:   PARAGRAF LTD, PARAGRAF LTD
  • 国际专利分类:   C01B032/186, H01L021/205, H01L021/02, H01L029/16
  • 专利详细信息:   DE102021124690-A1 31 Mar 2022 H01L-021/205 202228 Pages: 18 German
  • 申请详细信息:   DE102021124690-A1 DE10124690 23 Sep 2021
  • 优先权号:   GB015217, GB012447

▎ 摘  要

NOVELTY - Forming graphene on a silicon substrate, comprises (a) providing a silicon wafer having a growth surface free of native oxides in a reaction chamber; (b) nitriding the growth surface with a nitrogen-containing gas with the wafer at a temperature higher than 800 degrees C to thereby form a silicon nitride layer; and (c) forming a graphene single-layer or multi-layer structure on the silicon nitride layer, where the method being carried out in-situ and sequentially in the reaction chamber. USE - The graphene-on-silicon layered structure is useful for electronic device (claimed). ADVANTAGE - The graphene-on-silicon layered structure reduces current leakage. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for graphene-on-silicon layered structure with an intermediate silicon nitride layer.