▎ 摘　　要

NOVELTY - Forming graphene on a silicon substrate, comprises (a) providing a silicon wafer having a growth surface free of native oxides in a reaction chamber; (b) nitriding the growth surface with a nitrogen-containing gas with the wafer at a temperature higher than 800 degrees C to thereby form a silicon nitride layer; and (c) forming a graphene single-layer or multi-layer structure on the silicon nitride layer, where the method being carried out in-situ and sequentially in the reaction chamber. USE - The graphene-on-silicon layered structure is useful for electronic device (claimed). ADVANTAGE - The graphene-on-silicon layered structure reduces current leakage. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for graphene-on-silicon layered structure with an intermediate silicon nitride layer.