▎ 摘　　要

NOVELTY - A structured graphene at 3C-silicon carbide substrate is prepared by conducting standard washing on silicon substrate, placing washed silicon substrate in chemical vapor deposition system, vacuumizing, heating in the presence of hydrogen, introducing propane, carbonizing, growing carbide layer, heating, introducing propane and silane, conducting 3C-silicon carbide film heteroepitaxial growth, and cooling gradually to room temperature in the presence of hydrogen. USE - Method of preparing structured graphene at 3C-silicon carbide substrate for preparing microelectronic device. ADVANTAGE - The method prepares substrate having smooth surface and low porosity. DETAILED DESCRIPTION - A structured graphene at 3C-silicon carbide substrate is prepared by: (A) conducting standard washing on silicon substrate having a length of 4-12 inches, placing washed silicon substrate in chemical vapor deposition system, and vacuumizing at a pressure of 107 mbar; (B) heating at 950-1150 degrees C in the presence of hydrogen, introducing propane at a rate of 30 ml/minute, carbonizing for 3-7 minutes, and growing carbide layer; (C) heating at 1150-1300 degrees C, introducing propane at a flow rate of 30-50 ml/minute and silane at a flow rate of 15-25 ml/minute, conducting 3C-silicon carbide film heteroepitaxial growth for 36-60 minutes, and cooling gradually to room temperature in the presence of hydrogen; (D) subjecting grown 3C-silicon carbide film to plasma enhanced chemical vapor phase deposition to form silicon oxide layer having a thickness of 0.5-1 mu m, coating a layer of photoresist on the surface of mask, exposing 3C-silicon carbide, heating at 800-1000 degrees C in a quartz tube, and adding carbon tetrachloride; and (E) heating at 60-80 degrees C for 30-120 minutes while introducing argon at a flow rate of 50-80 ml/minute, and annealing at 1000-1100 degrees C for 10-20 minutes in the presence of argon controlled at a flow rate of 25-100 ml/minute. DESCRIPTION OF DRAWING(S) - The drawing is a flow chart of a method of preparing structured graphene at 3C-silicon carbide substrate (Drawing includes non-English language text).