▎ 摘　　要

NOVELTY - The method involves performing a first anneal on a substrate having a metal layer adjacent to a carbon-containing layer (205). A metal-containing compound layer and a graphene layer is formed by the first anneal. The graphene layer is formed by depositing the metal on a carrier substrate e.g. silicon carbide substrate. The graphene layer is transferred to a device substrate, after performing the first anneal and the graphite is not formed prior to the transfer. An active device is formed on the device substrate. A conductive layer of the active device is formed by the graphene layer. USE - Method for manufacturing carbon layer for semiconductor device e.g. integrated circuit including active and passive devices such as transistors, resistors, capacitors and inductors. ADVANTAGE - The process of forming a carbon layer is easily integrated into existing manufacturing processes thus a high-quality, efficient method of manufacturing the carbon layer can be obtained. The need for transfer layer is avoided by removing the first substrate and the silicide layer, once the carbon layer is in place. The useful and easily scalable material is beneficial to mass production and incorporated into integrated circuit process flows. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of formation of contacts to the carbon layer in the formation of the transistor. Carbon-containing layer (205) Dielectric layer (607) Gate electrode (609) Gate dielectric layer (611) Contact (901)