• 专利标题:   Manufacture of heteroatom-doped porous graphene electrocatalyst for cathode material, involves applying liquid of perforated-surface graphene oxide, heteroatom compound and solvent on substrate, supplying reducing gas and heating.
  • 专利号:   CN104959134-A, CN104959134-B
  • 发明人:   JIANG Z
  • 专利权人:   UNIV SOUTH CHINA TECHNOLOGY
  • 国际专利分类:   B01J019/08, B01J021/18, B01J027/04, B01J027/14, H01M004/90
  • 专利详细信息:   CN104959134-A 07 Oct 2015 B01J-021/18 201626 Pages: 18 Chinese
  • 申请详细信息:   CN104959134-A CN10379585 30 Jun 2015
  • 优先权号:   CN10379585

▎ 摘  要

NOVELTY - Manufacture of heteroatom-doped porous graphene electrocatalyst involves mixing perforated-surface graphene oxide, heteroatom source compound as dopant and a solvent to obtain a coating solution, applying the coating liquid to the substrate surface, freeze-drying perforated-surface graphene oxide-heteroatom-containing precursor solid film on substrate, placing the film in high-temperature plasma tube reactor, supplying reducing gas, heating, cooling, soaking in acid, washing with deionized water, and drying. USE - Manufacture of heteroatom-doped porous graphene electrocatalyst used for cathode material for proton exchange membrane fuel cell, direct alcohol fuel cell and metal-air battery (all claimed). ADVANTAGE - The method enables efficient manufacture of heteroatom-doped porous graphene electrocatalyst with excellent electrochemical characteristics and redox catalytic property. DETAILED DESCRIPTION - Manufacture of heteroatom-doped porous graphene electrocatalyst involves ultrasonically-dispersing graphene oxide in water to obtain a graphene oxide solution, stirring, adding concentrated nitric acid, ultrasonically-reacting, adding deionized water, centrifuging, deacidifying, purifying, filtering, drying to obtain perforated-surface graphene oxide, mixing perforated-surface graphene oxide, heteroatom source compound as dopant and a solvent to obtain a coating solution, applying the coating liquid to the substrate surface, freeze-drying perforated-surface graphene oxide-heteroatom-containing precursor solid film on substrate, placing the film in high-temperature plasma tube reactor under pressure of 10-4 to 10-3 Pa, supplying reducing gas to high-temperature plasma reactor, heating to 300-600 degrees C, cooling, soaking in dilute acid, washing with deionized water, and drying.