▎ 摘　　要

NOVELTY - The sensor has an insulating layer (20) formed on a substrate (10). A lower electrode (30) is formed on the insulating layer to reflect light. A semiconductor material (40) is formed to extend from above the insulating layer and surround the lower electrode. A Schottky junction (35) is provided in which a Schottky barrier is formed between the lower electrode and the semiconductor material to detect infrared wavelengths. An upper electrode (50) is configured for extending from above the insulating layer, connected to an upper end of the semiconductor material, and transmitting light incident from the outside to the lower electrode. The transition metal dichalcogenide includes two-dimensional material of molybdenum disulfide and tungsten diselenide. The lower electrode is made up of palladium and platinum. The upper electrode passes light incident from the outside to reach the lower electrode by forming the transparent electrode made of indium tin oxide and graphene. USE - Optical sensor using Schottky junction. ADVANTAGE - The sensor implements the high-efficiency infrared light sensor that operates at room temperature by adjusting the Schottky barrier formed during metal-semiconductor bonding in the structure of the field effect transistor to detect infrared rays of the specific wavelength, and implements the infrared light sensor with the opening at the top of the sensor. The improved light-receiving ability is secured, and the infrared absorption is increased through electrons generated from the metal electrode under the sensor. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: an infrared sensing method using optical sensor; and a method for manufacturing optical sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the optical sensor. (Drawing includes non-English language text) 10Substrate 20Insulating layer 30Lower electrode 35Schottky junction 40Semiconductor material 50Upper electrode