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  • 专利标题:   Vapor deposition process for selectively depositing material on a first surface of substrate relative to a second organic surface for semiconductor device, comprises contacting the substrate cyclically with a vapor phase hydrophobic first reactant and a vapor phase second reactant.
  • 专利号:   US2021351031-A1
  • 发明人:   TOIS E, HAUKKA S P, NISKANEN A, MATERO R H, SUEMORI H, FAERM E
  • 专利权人:   ASM IP HOLDING BV
  • 国际专利分类:   C23C016/455, H01L021/32, C23C016/40, H01L021/02
  • 专利详细信息:   US2021351031-A1 11 Nov 2021 H01L-021/02 202204 English
  • 申请详细信息:   US2021351031-A1 US370263 08 Jul 2021
  • 优先权号:   US332396P, US370263

▎ 摘　　要

NOVELTY - Vapor deposition process for selectively depositing material on a first surface of a substrate relative to a second organic surface, comprises contacting the substrate cyclically with a vapor phase hydrophobic first reactant and a vapor phase second reactant, where the material is deposited selectively on the first surface relative to the second organic surface. USE - The method is useful for vapor deposition process for selectively depositing material on a first surface of substrate relative to a second organic surface for field of semiconductor device.