▎ 摘　　要

NOVELTY - Forming a graphene film on a silicon carbide material, involves: heating the silicon carbide material to a growth temperature, where the growth temperature is 1000-2200 degrees C; and exposing the silicon carbide material to a growth atmosphere comprising a halogen species, where the halogen species reacts with the silicon carbide material to remove silicon from it. USE - The method is useful or forming a graphene film on a silicon carbide material (claimed). ADVANTAGE - The method forms a graphene film with improved characteristics and properties.