▎ 摘　　要

NOVELTY - Manufacture of light-emitting device involves (S1) providing one or more functional layers on an electrode (e1), (S2) providing an electrode (e2) on the one or more functional layers, and obtaining functional layer(s) by performing thermal annealing treatment (t2) on a solution of the corresponding functional layer material after the thermal annealing treatment (t1). USE - Manufacture of light-emitting device e.g. quantum dot light emitting device (QLED) and organic light emitting device used for display device (all claimed). ADVANTAGE - The method removes the internal stress of the functional layer, suppresses cracking of functional layers, and provides a light-emitting device having excellent yield and photoelectric performance. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of the manufacture of light-emitting device. (Drawing includes non-English language text) S1Functional layer providing step S2Electrode providing step