• 专利标题:   Making isotopically enriched graphene, comprises e.g. accelerating ion beam with an electric field towards substrate; and using magnetic or electric field generating devices to separate the ion beam into many component ion beams.
  • 专利号:   US2011031104-A1, US8647436-B2
  • 发明人:   BARKER D L, OWENS W R, BECK J W
  • 专利权人:   RAYTHEON CO, ARIZONA BOARD OF REGENTS, RAYTHEON CO, ARIZONA BOARD OF REGENTS
  • 国际专利分类:   C01B031/02, C30B029/02
  • 专利详细信息:   US2011031104-A1 10 Feb 2011 C01B-031/02 201117 Pages: 19 English
  • 申请详细信息:   US2011031104-A1 US908852 20 Oct 2010
  • 优先权号:   US061317, US908852

▎ 摘  要

NOVELTY - Making isotopically enriched graphene, comprises: accelerating ion beam with an electric field towards substrate; using magnetic or electric field generating devices to separate the ion beam into many component ion beams; passing a selected component ion beam substantially comprised of a single ion species or molecular ion toward the substrate and filtering out the remaining component ion beams; and directing the selected component ion beam onto the substrate to epitaxially grow isotopically-enriched graphene on the surface of the single crystal region of the substrate. USE - The method is useful for making isotopically enriched graphene. DETAILED DESCRIPTION - Making isotopically enriched graphene, comprises: (a) providing a catalyst substrate including a single crystal region on a surface of the substrate, where the region has a hexagonal crystal lattice substantially lattice-matched to graphene; (b) providing a carbon ion beam source including a focusing aperture for generating a focused ion beam that is directed towards the substrate, where the beam comprises many ion species, each species comprises a different electrically charged carbon isotope or a different electrically charged molecular ion containing one or more carbon isotopes; (c) accelerating the ion beam with an electric field towards the substrate; (d) using magnetic or electric field generating devices to separate the ion beam into many component ion beams according to the charge-to-mass ratio of the different ion species; (e) passing a selected component ion beam substantially comprised of a single ion species containing a single desired carbon isotope or molecular ion containing a single desired carbon isotope toward the substrate and filtering out the remaining component ion beams containing undesired ion species; and (f) directing the selected component ion beam onto the substrate to epitaxially grow isotopically-enriched graphene on the surface of the single crystal region of the substrate from the desired carbon isotope.