• 专利标题:   Preparation of graphene used for forming single layer graphene, involves contacting precursor compound with substrate and heating substrate.
  • 专利号:   IN201402713-I4
  • 发明人:   KULKARNI G U R, MOGERA U, KURRA N
  • 专利权人:   JAWAHARLAL NEHRU CENT ADVANCED SCI RES
  • 国际专利分类:   C01B031/00
  • 专利详细信息:   IN201402713-I4 12 Feb 2016 C01B-031/00 201623 Pages: 28 English
  • 申请详细信息:   IN201402713-I4 INCH02713 03 Jul 2014
  • 优先权号:   INCH02713

▎ 摘  要

NOVELTY - Preparation of graphene involves contacting precursor compound with a substrate and heating the substrate. USE - Preparation of graphene e.g. single layer, bilayer and multilayer graphene (claimed). ADVANTAGE - The method enables preparation of graphene with high quality and is economical. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) defect-free single layer graphene exhibiting no D peaks/bands in Raman spectra; and (2) process for enhancing I2d/Ig ratio of graphene, which involves subjecting the prepared graphene to Joule heating.