• 专利标题:   Graphene structure fabricating method, involves pressing layer of highly oriented graphite with predefined pattern against substrate, and stamping graphene structure with predefined pattern on substrate.
  • 专利号:   US2009200707-A1
  • 发明人:   AHOPELTO J, HAATAINEN T, KIVIOJA J
  • 专利权人:   VALTION TEKNILLINEN TUTKIMUSKESKUS
  • 国际专利分类:   B29C059/02
  • 专利详细信息:   US2009200707-A1 13 Aug 2009 B29C-059/02 200956 Pages: 12 English
  • 申请详细信息:   US2009200707-A1 US367353 06 Feb 2009
  • 优先权号:   FI005113

▎ 摘  要

NOVELTY - The method involves providing a layer of highly oriented graphite with a predefined pattern. The layer of highly oriented graphite is pressed against a substrate. A graphene structure with a predefined pattern is stamped on the substrate. A body of highly oriented graphite is obtained, and a surface layer of the body is patterned by removing the substance of the body outside the predefined pattern. The patterned surface layer of the body is pressed against the substrate. The graphene structure is pressed against a hydrophilic surface of the substrate. USE - Method for fabricating a graphene structure. ADVANTAGE - The graphene structure with the predefined pattern is stamped on the substrate, so that the crystal orientation of a stamp is oriented in perpendicular to a patterned stamp surface with perfect accuracy. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a stamp for stamping graphene structures on a substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating a crystal structure of a single layer graphene.