▎ 摘　　要

NOVELTY - The transistor has a channel region which is comprised of a first channel section (21) that is orderly arranged along a source region (1) to a drain region (3), a second channel sections (22) and a third channel sections (23). The first channel section and the third channel sections are bent zigzag graphene nanometer belt. Another channel section is carbon nano tube. The source region and the drain region are set as armchair graphene nano-bands. The source region, the drain region and the channel region form a graphene-carbon nano-tube covalent heterojunction. USE - Carbon nanotube-graphene covalent heterojunction tunneling field effect transistor. ADVANTAGE - The electron in the armchair type graphene (source region) can be directly transported to the carbon nano-tube through the non-band-gap graphene-free graphene when the tunneling transistor is in the open state, thus avoiding tunneling barrier between the carbon nano-tube channel and the armchair type graphene. The rate of electron transporting from the source region to the channel is greatly increased, and the on-state saturation current of the tunneling transistor device is increased by one magnitude. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the barrier-free carbon nanotube-graphene covalent heterojunction tunneling field effect transistor. Source region (1) Drain region (3) First channel section (21) Second channel sections (22) Third channel sections (23)