▎ 摘　　要

NOVELTY - Processing graphene-based gallium nitride epitaxial layer involves folding polished copper foil into moderately sized purse, placing in quartz tube, pushing to central temperature zone of quartz tube, opening vacuum pump, evacuating, passing hydrogen into quartz tube, heating the quartz tube at 700 degrees C, adding hydrogen and argon to the quartz tube, continuously heating at 1045-1050 degrees C, closing intake valves, introducing oxygen for 2 minutes, introducing hydrogen and argon for 60 minutes, simultaneously introducing methane and hydrogen for 60 minutes, growing graphene on the copper foil, manually applying layer of poly(methyl methacrylate) film on the surface of copper foil, using homogenizer to obtain copper foil with spin-coated poly(methyl methacrylate), placing copper foil in heating table, heating at 50-70 degrees C, drying for 20 minutes, curing poly(methyl methacrylate) film, immersing in ammonium persulfate solution for 4-12 hours and processing. USE - The method is useful for processing graphene-based gallium nitride epitaxial layer. ADVANTAGE - The method is capable of processing graphene-based gallium nitride epitaxial layer with high quality in economical manner. DETAILED DESCRIPTION - Processing graphene-based gallium nitride epitaxial layer involves folding polished copper foil into moderately sized purse, placing in quartz tube, pushing to central temperature zone of quartz tube, opening vacuum pump, evacuating under pressure of 0.6-2 Pa, passing 20-25 sccm hydrogen into quartz tube, heating the quartz tube at 700 degrees C, adding 20-25 sccm hydrogen and 700-720 sccm argon to the quartz tube, continuously heating at 1045-1050 degrees C, closing intake valves, processing under pressure of 0.6-2 Pa, introducing 2 sccm oxygen for 2 minutes, closing intake valves under pressure of 1 Pa, introducing 100 sccm hydrogen and 700 sccm argon for 60 minutes, simultaneously introducing 0.1-1 sccm methane and 400-600 sccm hydrogen for 60 minutes, maintaining flow rate of hydrogen and methane, rapidly cooling to room temperature, growing graphene on the copper foil with thickness of 0.34 nm, manually applying layer of poly(methyl methacrylate) film on the surface of copper foil, using homogenizer to obtain copper foil with spin-coated poly(methyl methacrylate), placing copper foil in heating table, heating at 50-70 degrees C, drying for 20 minutes, curing poly(methyl methacrylate) film, cutting the copper foil, immersing in 64-68 g/l ammonium persulfate solution for 4-12 hours, removing metal substrate to obtain single layer graphene film, transferring poly(methyl methacrylate)/graphene to deionized water with clean glass slide, soaking for 30 minutes, removing small piece of poly(methyl methacrylate)/single layer graphene from sapphire substrate, obtaining sapphire substrate covering poly(methyl methacrylate)/single layer graphene, adding 100-200 ml acetone solution to glass container, soaking for 12-24 hours, transferring to ethanol solution for 30 minutes, removing single layer graphene/substrate, naturally drying, placing in reaction chamber, introducing ammonia gas, heating at 900 degrees C or 1100 degrees C under pressure of 300 mbar, introducing 800-1000 sccm hydrogen, 9600-10500 sccm ammonia and 230-260 sccm gallium sources, cooling to room temperature to obtain gallium nitride epitaxial layer, slowly attaching pyrolytic tape to the upper surface of the gallium nitride epitaxial layer, heating at 120 degrees C for 5 minutes, foaming and processing.