▎ 摘　　要

NOVELTY - A field effect transistor (100) is made by providing a graphene nanoribbon composite structure (20) comprising a substrate (16) and a set of graphene nanoribbons (22) spaced apart from each other, where the set of graphene nanoribbons is located on the substrate and extends substantially along a same direction, and each of the set of graphene nanoribbons comprises a first end and a second end opposite to the first end; forming a source electrode (102) on the first end, and forming a drain electrode (104) on the second end, where the source electrode and the drain electrode are electrically connected to the set of graphene nanoribbons; forming an insulating layer (106) on the set of graphene nanoribbons, where the set of graphene nanoribbons is between the insulating layer and the substrate; and forming a gate (108) on a surface of the insulating layer away from the substrate. USE - The method is useful for making a field effect transistor (claimed). ADVANTAGE - Before combining the graphene film and the substrate, water or organic solvent is located on the substrate, so that the set of wrinkles is formed near the protrusions when combining the graphene film and the substrate; and the set of graphene nanoribbons is obtained by further etching the graphene film. The field effect transistors can be prepared in a large area, and the cost and energy consumption are low. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for field effect transistor, comprising graphene nanoribbon composite structure comprising a substrate and a set of graphene nanoribbons spaced apart from each other, where the set of graphene nanoribbons is located on the substrate and extend substantially along a same direction, and each of the set of graphene nanoribbons comprises first end and a second end opposite to the first end; a source electrically connected to the set of graphene nanoribbons; and a drain electrically connected to the set of graphene nanoribbons. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the field effect transistor. Substrate (16) Graphene nanoribbon composite structure (20) Graphene nanoribbons (22) Field effect transistor (100) Source electrode (102) Drain electrode (104) Insulating layer (106) Gate (108)