• 专利标题:   Forming graphene film, used in optoelectronics, comprises depositing non-gaseous carbon source onto catalyst surface, exposing non-gaseous carbon source to a gas and initiating the conversion of non-gaseous carbon source to graphene film.
  • 专利号:   US2014234200-A1, US9096437-B2
  • 发明人:   TOUR J, SUN Z, YAN Z, RUAN G, PENG Z
  • 专利权人:   UNIV RICE WILLIAM MARSH
  • 国际专利分类:   C01B031/00, C01B031/04
  • 专利详细信息:   US2014234200-A1 21 Aug 2014 C01B-031/04 201456 Pages: 32 English
  • 申请详细信息:   US2014234200-A1 US561889 30 Jul 2012
  • 优先权号:   US311615P, US561889

▎ 摘  要

NOVELTY - Forming a graphene film, comprises: depositing a non-gaseous carbon source onto a catalyst surface; exposing the non-gaseous carbon source to at least one gas, where the gas comprises a gas flow rate; and initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. USE - The method is useful for forming a graphene film (claimed) for optoelectronics. ADVANTAGE - The method: provides the graphene films with low defects, low sheet resistance and ambipolar field effects; and enables the formation of easily transferable graphene films with desirable sizes, thicknesses and patterns by utilizing cost-effective/inexpensive non-gaseous carbon sources. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene film made by the method.